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FMMT549
FMMT549
C
E B
SuperSOT -3 (SOT-23)
TM
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
TA = 25C unless otherwise noted
FMMT549 30 35 5 1 2 -55 to +150
Units V V V A C
Collector Current - Continuous - Peak Pulse Current Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
TA = 25C unless otherwise noted
Max Characteristic FMMT549 PD RJA Total Device Dissipation* Derate above 25C Thermal Resistance, Junction to Ambient 500 4 250 mW mW/C C/W Units
*Device mounted on FR-4 PCB 4.5" X 5"; mounting pad 0.02 in2 of 2oz copper.
(c) 1998 Fairchild Semiconducto Corporation
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FMMT549.lwpPrPB 7/10/98 revB
FMMT549
PNP Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 A IE = 100 A VCB = 30 V VCB = 30 V, Ta=100C IEBO Emitter Cutoff Current VEB = 4V 30 35 5 100 10 100 V V V
nA uA nA
ON CHARACTERISTICS* hFE DC Current Gain IC = 50 mA, VCE = 2V IC = 500 mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1 A, IB = 100 mA IC = 2 A, IB = 200 mA VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 1 A, IB = 100 mA IC = 1 A, VCE = 2 V 70 100 80 40 500 750 1.25 1 mV mV V V 300 -
SMALL SIGNAL CHARACTERISTICS Cobo fT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1MHz IC = 100 mA,VCE = 5 V, f=100MHz 100 25 pF MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
(c) 1998 Fairchild Semiconducto Corporation
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FMMT549.lwpPrPB 7/10/98 revB
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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